open access

https://hdl.handle.net/2115/50233

The Effects of Nitrogen and Plasma Power on Electrochemical Properties of Boron-Doped Diamond Electrodes Grown by MPCVD

英語

electrochemical electrodes

2002

The Electrochemical Society

Journal of The Electrochemical Society

149(1)

E1-E5

The influences of nitrogen addition and the attenuation of microwave power during microwave plasma-assisted chemical vapor deposition (MPCVD) of diamond films on electrochemical properties of the grown films were investigated. Although diamond films grown in the presence of a small amount of nitrogen did not contain sp2 carbon and appeared to be normally deposited films, the electrical and electrochemical properties were different from films grown under an atmosphere without nitrogen. Especially, the potential windows of diamond films grown in the presence of nitrogen at low microwave power were very wide and extended to 3.6 V in sulfuric acid solution, which is comparable to the widest value of the potential window of diamond electrodes reported till now. It was also found that the attenuation of the plasma power during MPCVD by itself was effective in the expansion of the potential window because of the defect-free growth of diamond crystals.

学術雑誌論文

Version of Record

© The Electrochemical Society, Inc. 2001. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in J. Electrochem. Soc. 2002 volume 149, issue 1, E1-E5.

0013-4651