X-ray photoelectron spectroscopic studies of the chemical nature of as-prepared and NaOH-treated porous silicon layer

Murakoshi, Kei; Uosaki, K.

X-ray photoelectron spectroscopic studies of the chemical nature of as-prepared and NaOH-treated porous silicon layer

Murakoshi, Kei; Uosaki, K.

Applied Physics Letters, 1993, 62(14), 1676-1678

Permalink : https://hdl.handle.net/2115/50251

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アクセス権	open access
URI	https://hdl.handle.net/2115/50251
タイトル	X-ray photoelectron spectroscopic studies of the chemical nature of as-prepared and NaOH-treated porous silicon layer
著者	著者名 Murakoshi, Kei
著者	e-Rad_Researcher 20133697 著者名 Uosaki, K.
言語	英語
キーワード	SILICON
	POROUS MATERIALS
	ANODIZATION
	PHOTOELECTRON SPECTROSCOPY
	SURFACE TREATMENTS
	CHEMICAL COMPOSITION
	SURFACE STRUCTURE
	OXIDES
	LUMINESCENCE
発行日	1993-04-05
出版者	American Institute of Physics
収録物名	Applied Physics Letters
巻(号)	62(14)
ページ	1676-1678
抄録	The effect of various surface treatments of a porous silicon layer (PSL) including etching in NaOH solution on the chemical nature of the surface was studied using x-ray photoelectron spectroscopy. As-prepared PSL, which is formed by anodic oxidation of silicon in ethanolic HF solution, is covered with silicon oxide. NaOH treatment removes the surface oxide almost completely. Chemical states of surface silicon at the NaOH-treated PSL surface are very close to that at the HF-treated silicon surface. Surface oxygen on the NaOH-treated PSL surface seems to be in the form of Si-OH.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	Copyright 1993 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 62, 1676 (1993) and may be found at https://dx.doi.org/10.1063/1.109597
PISSN	0003-6951
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1063/1.109597