open access

https://hdl.handle.net/2115/50260

The Theory of the Light-Induced Evolution of Hydrogen at Semiconductor Electrodes

英語

energy level

1978

The Electrochemical Society

Journal of The Electrochemical Society

125(2)

223-227

The photoelectrode kinetics of the hydrogen evolution reaction is considered, using the WKB approximation for the penetration of the barrier at the semiconductor-solution interface. The absorption characteristics of photons in the eIectrode are introduced and the number of electrons produced at the surface is obtained as a function of the semiconductor statistics, and also diffusion and field effects. The model makes use of the conclusion that the photo-produced electrons have been deactivated to the bottom of the conduction band by the time they have diffused from the point of photon absorption to the surface. Image energy and the potential difference in the double layer at the semiconductor-solution interface are taken into account. The expression obtained for the photo hydrogen current density is tested in its ability to predict the photo-current-potential curves at the gallium phosphide cathode. Agreement with experiment is fair. Discrepancies are discussed.

学術雑誌論文

Version of Record

© The Electrochemical Society, Inc. 1978. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in J. Electrochem. Soc. 1978 volume 125, issue 2, 223-227.

0013-4651