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論文情報

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アクセス権	open access
URI	https://hdl.handle.net/2115/50261
タイトル	The Rate of the Photoelectrochemical Generation of Hydrogen at p-Type Semiconductors
著者	著者名 Bockris, J. O'M.
	e-Rad_Researcher 20133697 著者名 Uosaki, K.
言語	英語
キーワード	electrolysis
	photoelectrochemistry
	hydrogen
	photocathodes
	II-VI semiconductors
	III-V semiconductors
	silicon
	silicon compounds
	carbon compounds
	electric properties
	visible spectra
	semiconductor-electrolyte boundaries
	pH
	hydrogen production
	photoelectrochemical reaction
	p-type semiconductors
	photocathodes
発行日	1977
出版者	The Electrochemical Society
収録物名	Journal of The Electrochemical Society
巻(号)	124(9)
ページ	1348-1355
抄録	The current-potential relations with and without illumination, quantum efficiency-wavelength relations at several potentials, the flatband potentials, the transient behavior, and the stability of seven p-type semiconductors, i.e., ZnTe, CdTe, GaAs, InP, GaP, SiC, and Si, have been measured in 1N NaOH and 1N H2SO4. The position of the photocurrent-potential relations are related to the flatband potential and the energy gap of the semiconductor. The existence of the maximum in quantum efficiency-wavelength relation is analyzed by considering surface recombination. The stability and the transient behavior are analyzed.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	© The Electrochemical Society, Inc. 1977. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in J. Electrochem. Soc. 1977 volume 124, issue 9, 1348-1355.
PISSN	0013-4651
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1149/1.2133652

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