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論文情報

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アクセス権	open access
URI	https://hdl.handle.net/2115/50404
タイトル	Studies on atomic layer deposition Al2O3/In0.53Ga0.47As interface formation mechanism based on air-gap capacitance-voltage method
著者	著者名 Yoshida, Toshiyuki
	e-Rad_Researcher 80149898 著者名 Hashizume, Tamotsu
言語	英語
キーワード	air gaps
	alumina
	annealing
	atomic layer deposition
	capacitance
	electronic density of states
	gallium arsenide
	III-V semiconductors
	indium compounds
	interface states
	oxidation
	semiconductor-insulator boundaries
発行日	2012-09-17
出版者	American Institute of Physics
収録物名	Applied Physics Letters
巻(号)	101(12)
ページ	122102
抄録	The air-gap capacitance-voltage characteristics of InGaAs surfaces were measured after 1-, 2-, 6-, 9-, and 17-cycle atomic layer deposition (ALD) Al2O3 processing. A high density of mid-gap states was found to be generated and increased during these ALD process steps, while the native oxide component was reduced. On the other hand, the mid-gap state density was drastically reduced after the usual annealing process. The generation of the mid-gap states seemed to be relevant to a non-stoichiometric Al-oxide component associated with a deficit in oxygen atoms, which became re-oxidized during the annealing process.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 101, 122102 (2012) and may be found at https://dx.doi.org/10.1063/1.4753927
PISSN	0003-6951
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1063/1.4753927

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