Valence band offset at Al2O3/In0.17Al0.83N interface formed by atomic layer deposition

Akazawa, M.; Nakano, T.

Applied Physics Letters, 2012, 101(12), 122110

Permalink : https://hdl.handle.net/2115/50407

このアイテムのアクセス数:1,080件（2026-02-12 12:40 集計）

閲覧可能ファイル 

ファイル フォーマット サイズ 閲覧回数 説明
APL101-12_122110 pdf 824 KB 1,272

論文情報

ファイル出力 EndNote Basic出力 Mendeley出力

アクセス権
open access
URI
https://hdl.handle.net/2115/50407
タイトル
Valence band offset at Al2O3/In0.17Al0.83N interface formed by atomic layer deposition
著者
e-Rad_Researcher
30212400
著者名
Akazawa, M.
著者名
Nakano, T.
言語
英語
キーワード
aluminium compounds
atomic layer deposition
core levels
III-V semiconductors
indium compounds
valence bands
wide band gap semiconductors
X-ray photoelectron spectra
発行日
2012-09-17
出版者
American Institute of Physics
収録物名
Applied Physics Letters
巻(号)
101(12)
ページ
122110
抄録
The valence band offset, ΔE_[V], at an Al2O3/In0.17Al0.83N interface formed by atomic layer deposition was measured by x-ray photoelectron spectroscopy. The conventional method of using the core level separation, ΔE_[CL], between O 1s and In 4d resulted in ΔE_[V] = 1.3 eV, which was apparently consistent with the direct observation of the valence band edge varying the photoelectron exit angle, θ. However, ΔE_[CL] and full width at half maximum of core-level spectra were dependent on θ, which indicated significant potential gradients in Al2O3 and InAlN layers. An actual ΔE_[V] of 1.2 eV was obtained considering the potential gradients.
資源タイプ
学術雑誌論文
出版タイプ
Version of Record
権利情報
Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 101, 122110 (2012) and may be found at https://dx.doi.org/10.1063/1.4754141
PISSN
0003-6951
関連情報 (isIdenticalTo)
出版社版DOI
https://doi.org/10.1063/1.4754141