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https://hdl.handle.net/2115/50602

Influence of annealing on spin-dependent tunneling characteristics of fully epitaxial Co2MnGe/MgO/Co50Fe50 magnetic tunnel junctions

英語

2009-02-20

American Institute of Physics

Applied Physics Letters

94(7)

072510

We found that the tunnel magnetoresistance ratio of fully epitaxial Co2MnGe/MgO/Co50Fe50 magnetic tunnel junctions (MTJs) increased discontinuously and significantly from 92% at room temperature (RT) (244% at 4.2 K) for Ta of 475 °C to 160% at RT (376% at 4.2 K) for Ta of 500 °C, where Ta is the temperature at which the MTJ trilayer was in situ annealed right after deposition of the upper electrode. We also found that the dI/dV versus V characteristics for the parallel and antiparallel magnetization configurations changed discontinuously and markedly with increasing Ta from 475 °C or less to 500 °C or higher. These significant changes are discussed in terms of a possible change in the spin-dependent interfacial density of states.

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Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 94, 072510 and may be found at https://dx.doi.org/10.1063/1.3083559

0003-6951