Critical role of interface states for spin-dependent tunneling in half-metallic Co2MnSi-based magnetic tunnel junctions investigated by tunneling spectroscopy

Ishikawa, Takayuki; Itabashi, Naoki; Taira, Tomoyuki; Matsuda, Ken-ichi; Uemura, Tetsuya; Yamamoto, Masafumi

Critical role of interface states for spin-dependent tunneling in half-metallic Co2MnSi-based magnetic tunnel junctions investigated by tunneling spectroscopy

Ishikawa, Takayuki; Itabashi, Naoki; Taira, Tomoyuki et al.

Applied Physics Letters, 2009, 94(9), 092503

Permalink : https://hdl.handle.net/2115/50604

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アクセス権	open access
URI	https://hdl.handle.net/2115/50604
タイトル	Critical role of interface states for spin-dependent tunneling in half-metallic Co2MnSi-based magnetic tunnel junctions investigated by tunneling spectroscopy
著者	Ishikawa, Takayuki ; Itabashi, Naoki ; Taira, Tomoyuki ; Matsuda, Ken-ichi ; Uemura, Tetsuya ; Yamamoto, Masafumi
著者名 Ishikawa, Takayuki
著者名 Itabashi, Naoki
著者名 Taira, Tomoyuki
e-Rad_Researcher 80360931 著者名 Matsuda, Ken-ichi
e-Rad_Researcher 20344476 著者名 Uemura, Tetsuya
e-Rad_Researcher 10322835 著者名 Yamamoto, Masafumi
言語	英語
発行日	2009-03-04
出版者	American Institute of Physics
収録物名	Applied Physics Letters
巻(号)	94(9)
ページ	092503
抄録	We investigated at 4.2 K the differential conductance (dI/dV) versus V characteristics of fully epitaxial Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions (MTJs) featuring high tunnel magnetoresistance ratios of about 700% at 4.2 K (about 180% at room temperature). We developed a tunneling model to explain the observed tunneling spectra and showed the critical role played by interface states for minority spins existing around the Fermi level of Co2MnSi electrodes facing a MgO tunnel barrier in the spin-dependent tunneling characteristics of these MTJs with half-metallic electrodes.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Appl. Phys. Lett. 94 9, 092503 and may be found at https://dx.doi.org/10.1063/1.3083560
PISSN	0003-6951
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1063/1.3083560