High tunnel magnetoresistance in fully epitaxial magnetic tunnel junctions with a full-Heusler alloy Co2Cr0.6Fe0.4Al thin film

Marukame, Takao; Ishikawa, Takayuki; Matsuda, Ken-Ichi et al.

Applied Physics Letters, 2006, 88(26), 262503

Permalink : https://hdl.handle.net/2115/50607

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アクセス権
open access
URI
https://hdl.handle.net/2115/50607
タイトル
High tunnel magnetoresistance in fully epitaxial magnetic tunnel junctions with a full-Heusler alloy Co2Cr0.6Fe0.4Al thin film
著者
Marukame, Takao ; Ishikawa, Takayuki ; Matsuda, Ken-Ichi ; Uemura, Tetsuya ; Yamamoto, Masafumi
著者名
Marukame, Takao
著者名
Ishikawa, Takayuki
e-Rad_Researcher
80360931
著者名
Matsuda, Ken-Ichi
e-Rad_Researcher
20344476
著者名
Uemura, Tetsuya
e-Rad_Researcher
10322835
著者名
Yamamoto, Masafumi
言語
英語
発行日
2006-06-28
出版者
American Institute of Physics
収録物名
Applied Physics Letters
巻(号)
88(26)
ページ
262503
抄録
Fully epitaxial magnetic tunnel junctions (MTJs) were fabricated with a Co-based full-Heusler alloy Co2Cr0.6Fe0.4Al (CCFA) thin film, whose composition was close to the stoichiometric one, and a MgO tunnel barrier. Cross-sectional high-resolution transmission electron microscope observations indicated that all layers of the CCFA/MgO/Co50Fe50 MTJ layer structure were grown epitaxially and were single crystalline. The microfabricated CCFA/MgO/Co50Fe50 MTJs exhibited high tunnel magnetoresistance (TMR) ratios of 90% at room temperature and 240% at 4.2 K. A high tunneling spin polarization of 0.79 at 4.2 K was obtained for the epitaxial CCFA films from the TMR ratios.
資源タイプ
学術雑誌論文
出版タイプ
Version of Record
権利情報
Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 88, 262503 and may be found at https://dx.doi.org/10.1063/1.2217166
PISSN
0003-6951
関連情報 (isIdenticalTo)
出版社版DOI
https://doi.org/10.1063/1.2217166