Improved tunnel magnetoresistance characteristics of magnetic tunnel junctions with a Heusler alloy thin film of Co2MnGe and a MgO tunnel barrier

Hakamata, Shinya; Ishikawa, Takayuki; Marukame, Takao et al.

Journal of Applied Physics, 2007, 101(9), 09J513

Permalink : https://hdl.handle.net/2115/50615

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アクセス権
open access
URI
https://hdl.handle.net/2115/50615
タイトル
Improved tunnel magnetoresistance characteristics of magnetic tunnel junctions with a Heusler alloy thin film of Co2MnGe and a MgO tunnel barrier
著者
Hakamata, Shinya ; Ishikawa, Takayuki ; Marukame, Takao ; Matsuda, Ken-Ichi ; Uemura, Tetsuya ; Arita, Masashi ; Yamamoto, Masafumi
著者名
Hakamata, Shinya
著者名
Ishikawa, Takayuki
著者名
Marukame, Takao
e-Rad_Researcher
80360931
著者名
Matsuda, Ken-Ichi
e-Rad_Researcher
20344476
著者名
Uemura, Tetsuya
著者名
Arita, Masashi
e-Rad_Researcher
10322835
著者名
Yamamoto, Masafumi
言語
英語
発行日
2007-05-09
出版者
American Institute of Physics
収録物名
Journal of Applied Physics
巻(号)
101(9)
ページ
09J513
抄録
We fabricated magnetic tunnel junctions (MTJs) with a Co-based full-Heusler alloy thin film of Co2MnGe (CMG) and a MgO tunnel barrier. The microfabricated MTJs with a Co-rich CMG film showed relatively high tunnel magnetoresistance ratios of 83% at room temperature and 185% at 4.2 K. These values are much higher than those previously obtained for CMG/MgO MTJs with a Co-deficient CMG film.
資源タイプ
学術雑誌論文
出版タイプ
Version of Record
権利情報
Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J. Appl. Phys. 101, 09J513 (2007) and may be found at https://dx.doi.org/10.1063/1.2713209
PISSN
0021-8979
関連情報 (isIdenticalTo)
出版社版DOI
https://doi.org/10.1063/1.2713209