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アクセス権	open access
URI	https://hdl.handle.net/2115/50618
タイトル	Fabrication of fully epitaxial Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions
著者	Ishikawa, Takayuki ; Hakamata, Shinya ; Matsuda, Ken-ichi ; Uemura, Tetsuya ; Yamamoto, Masafumi
著者名 Ishikawa, Takayuki
著者名 Hakamata, Shinya
e-Rad_Researcher 80360931 著者名 Matsuda, Ken-ichi
e-Rad_Researcher 20344476 著者名 Uemura, Tetsuya
e-Rad_Researcher 10322835 著者名 Yamamoto, Masafumi
言語	英語
発行日	2008-04-01
出版者	American Institute of Physics
収録物名	Journal of Applied Physics
巻(号)	103(7)
ページ	07A919
抄録	Fully epitaxial magnetic tunnel junctions (MTJs) were fabricated with full-Heusler alloy Co2MnSi thin films as both lower and upper electrodes and with a MgO tunnel barrier. The fabricated MTJs showed clear exchange-biased tunnel magnetoresistance (TMR) characteristics with high TMR ratios of 179% at room temperature (RT) and 683% at 4.2 K. In addition, the TMR ratio exhibited oscillations as a function of the MgO tunnel barrier thickness (tMgO) at RT, having a period of 0.28 nm, for tMgO ranging from 1.8 to 3.0 nm.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J. Appl. Phys. 103, 07A919 (2008) and may be found at https://dx.doi.org/10.1063/1.2843756
PISSN	0021-8979
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1063/1.2843756

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