Fabrication of fully epitaxial Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions

Ishikawa, Takayuki; Hakamata, Shinya; Matsuda, Ken-ichi et al.

Journal of Applied Physics, 2008, 103(7), 07A919

Permalink : https://hdl.handle.net/2115/50618

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アクセス権
open access
URI
https://hdl.handle.net/2115/50618
タイトル
Fabrication of fully epitaxial Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions
著者
Ishikawa, Takayuki ; Hakamata, Shinya ; Matsuda, Ken-ichi ; Uemura, Tetsuya ; Yamamoto, Masafumi
著者名
Ishikawa, Takayuki
著者名
Hakamata, Shinya
e-Rad_Researcher
80360931
著者名
Matsuda, Ken-ichi
e-Rad_Researcher
20344476
著者名
Uemura, Tetsuya
e-Rad_Researcher
10322835
著者名
Yamamoto, Masafumi
言語
英語
発行日
2008-04-01
出版者
American Institute of Physics
収録物名
Journal of Applied Physics
巻(号)
103(7)
ページ
07A919
抄録
Fully epitaxial magnetic tunnel junctions (MTJs) were fabricated with full-Heusler alloy Co2MnSi thin films as both lower and upper electrodes and with a MgO tunnel barrier. The fabricated MTJs showed clear exchange-biased tunnel magnetoresistance (TMR) characteristics with high TMR ratios of 179% at room temperature (RT) and 683% at 4.2 K. In addition, the TMR ratio exhibited oscillations as a function of the MgO tunnel barrier thickness (tMgO) at RT, having a period of 0.28 nm, for tMgO ranging from 1.8 to 3.0 nm.
資源タイプ
学術雑誌論文
出版タイプ
Version of Record
権利情報
Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J. Appl. Phys. 103, 07A919 (2008) and may be found at https://dx.doi.org/10.1063/1.2843756
PISSN
0021-8979
関連情報 (isIdenticalTo)
出版社版DOI
https://doi.org/10.1063/1.2843756