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https://hdl.handle.net/2115/50625

Structural, magnetic, and electrical properties of Co2MnSi∕MgO∕n-GaAs tunnel junctions

英語

2008-01-24

American Institute of Physics

Journal of Applied Physics

103(7)

07A703

The structural, magnetic, and electrical properties of Co2MnSi (CMS)/MgO (0–3.0 nm)/n-GaAs tunnel junctions were investigated. CMS films with L21-ordered structures were grown epitaxially on GaAs. The crystallographic relations were CMS(001)[100]∥GaAs(001)[110] when a thin MgO interlayer was inserted between the CMS and the GaAs, and CMS(001)[110]∥GaAs(001)[110] when the CMS film was directly grown on GaAs without a MgO interlayer. The CMS film without a MgO interlayer showed strong magnetic anisotropy consisting of uniaxial anisotropy with an easy axis of CMS[1−10] (GaAs[1−10]) direction and cubic anisotropy with easy axes of CMS⟨110⟩ directions. The uniaxial anisotropy was weakened in the samples with a MgO interlayer. The magnetization value of the CMS film with a 3.0-nm-thick MgO layer was approximately 820 emu/cm3 (3.9μB/f.u.) at room temperature (RT), a value slightly higher ( ∼ 7%) than that of the sample without MgO. The resistance value of the CMS/MgO (3.0 nm)/n-GaAs junction was approximately two to three orders of magnitude higher than that of the CMS/n-GaAs junction at RT. The potential height and width of the tunnel barrier in the CMS/MgO/n-GaAs junction were estimated to be 0.6 eV and 3.3 nm, respectively.

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Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J. Appl. Phys. 103, 07A703 (2008) and may be found at https://dx.doi.org/10.1063/1.2830833

0021-8979