Determination of the deep donor-like interface state density distribution in metal/Al2O3/n-GaN structures from the photocapacitance-light intensity measurement

Matys, M.; Adamowicz, B.; Hashizume, T.

Determination of the deep donor-like interface state density distribution in metal/Al2O3/n-GaN structures from the photocapacitance-light intensity measurement

Matys, M.; Adamowicz, B.; Hashizume, T.

Applied Physics Letters, 2012, 101(23), 231608

Permalink : https://hdl.handle.net/2115/51382

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アクセス権	open access
URI	https://hdl.handle.net/2115/51382
タイトル	Determination of the deep donor-like interface state density distribution in metal/Al2O3/n-GaN structures from the photocapacitance-light intensity measurement
著者	Matys, M. ; Adamowicz, B. ; Hashizume, T.
著者名 Matys, M.
著者名 Adamowicz, B.
e-Rad_Researcher 80149898 著者名 Hashizume, T.
言語	英語
キーワード	aluminium compounds
	gallium compounds
	III-V semiconductors
	interface states
	MIS structures
	photocapacitance
	valence bands
	wide band gap semiconductors
発行日	2012-12-03
出版者	American Institute of Physics
収録物名	Applied Physics Letters
巻(号)	101(23)
ページ	231608
抄録	We developed a method for determining of the deep donor-like interface state density distribution D_[it](E) at the insulator/wide bandgap semiconductor interface in metal/insulator/semiconductor structures from the measurements of photocapacitance vs. ultraviolet light intensity C_[L](Φ). From the comparison of theoretical and experimental C_[L](Φ) curves we obtained the continuous donor D_[it](E) in the energy range between 0.15 eV and 1 eV from the valence band top for a metal/Al2O3/n-GaN device. In addition, the acceptor-like interface state D_[it](E) in the upper part of the bandgap was determined from the capacitance-voltage method.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 101, 231608 (2012) and may be found at https://dx.doi.org/10.1063/1.4769815
PISSN	0003-6951
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1063/1.4769815