Direct measurement of donor-like interface state density and energy distribution at insulator/AlGaN interface in metal/Al2O3/AlGaN/GaN by photocapacitance method

Matys, M.; Adamowicz, B.; Hori, Y.; Hashizume, T.

Direct measurement of donor-like interface state density and energy distribution at insulator/AlGaN interface in metal/Al2O3/AlGaN/GaN by photocapacitance method

Matys, M.; Adamowicz, B.; Hori, Y. et al.

Applied Physics Letters, 2013, 103(2), 21603

Permalink : https://hdl.handle.net/2115/53087

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アクセス権	open access
URI	https://hdl.handle.net/2115/53087
タイトル	Direct measurement of donor-like interface state density and energy distribution at insulator/AlGaN interface in metal/Al2O3/AlGaN/GaN by photocapacitance method
著者	Matys, M. ; Adamowicz, B. ; Hori, Y. ; Hashizume, T.
著者名 Matys, M.
著者名 Adamowicz, B.
著者名 Hori, Y.
e-Rad_Researcher 80149898 著者名 Hashizume, T.
言語	英語
発行日	2013-07-10
出版者	American Institute of Physics
収録物名	Applied Physics Letters
巻(号)	103(2)
ページ	21603
抄録	We determined the energy distribution of donor-like interface state density D-itD(E) at the Al2O3/AlGaN interface in a metal/Al2O3/AlGaN/GaN heterostructure (MISH) capacitor. In this order, we developed a point-by-point graphical method based on the measurement and simulations of the MISH photocapacitance versus ultraviolet light intensity. We found a tail-like shaped D-itD(E) strongly decreasing from the value of 5 x 10(13) to 4 x 10(12) eV(-1) cm(-2) in the energy range between 0.12 eV and 0.45 eV from the AlGaN valence band edge. (C) 2013 AIP Publishing LLC.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 103, 021603 (2013) and may be found at http://apl.aip.org/resource/1/applab/v103/i2/p021603_s1
PISSN	0003-6951
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1063/1.4813407