Carrier dynamics and photoluminescence quenching mechanism of strained InGaSb/AlGaSb quantum wells

Jahan, Nahid A.; Hermannstädter, Claus; Sasakura, Hirotaka; Rotter, Thomas J.; Ahirwar, Pankaj; Balakrishnan, Ganesh; Kumano, Hidekazu; Suemune, Ikuo

Carrier dynamics and photoluminescence quenching mechanism of strained InGaSb/AlGaSb quantum wells

Jahan, Nahid A.; Hermannstädter, Claus; Sasakura, Hirotaka et al.

Journal of Applied Physics, 2013, 113(5), 053505

Permalink : https://hdl.handle.net/2115/54789

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アクセス権	open access
URI	https://hdl.handle.net/2115/54789
タイトル	Carrier dynamics and photoluminescence quenching mechanism of strained InGaSb/AlGaSb quantum wells
著者	Jahan, Nahid A. ; Hermannstädter, Claus ; Sasakura, Hirotaka ; Rotter, Thomas J. ; Ahirwar, Pankaj ; Balakrishnan, Ganesh ; Kumano, Hidekazu ; Suemune, Ikuo
著者名 Jahan, Nahid A.
著者名 Hermannstädter, Claus
e-Rad_Researcher 90374595 著者名 Sasakura, Hirotaka
著者名 Rotter, Thomas J.
著者名 Ahirwar, Pankaj
著者名 Balakrishnan, Ganesh
e-Rad_Researcher 70292042 著者名 Kumano, Hidekazu
e-Rad_Researcher 00112178 著者名 Suemune, Ikuo
言語	英語
発行日	2013-02-07
出版者	American Institute of Physics (AIP)
収録物名	Journal of Applied Physics
巻(号)	113(5)
ページ	053505
抄録	GaSb based quantum wells (QWs) show promising optical properties in near-infrared spectral range. In this paper, we present photoluminescence (PL) spectroscopies of InxGa1−xSb/AlyGa1−ySb QWs and discuss the possible thermal quenching and non-radiative carrier recombination mechanisms of the QW structures. The In and Al concentrations as well as the QW thicknesses were precisely determined with the X-ray diffraction measurements. Temperature dependent time-integrated and time-resolved PL spectroscopies resulted in the thermal activation energies of ∼45 meV, and the overall self-consistent calculation of the band parameters based on the measured physical values confirmed that the activation energies are due to the hole escape from the QW to the barriers. The relation of the present single carrier escape mechanism with the other escape mechanisms reported with other material systems was discussed based on the estimated band offset. The relation of the present thermal hole escape to the Auger recombination was also discussed.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics 113(5) 053505 and may be found at http://scitation.aip.org/content/aip/journal/jap/113/5/10.1063/1.4789374.
PISSN	0021-8979
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1063/1.4789374