Indium tin oxide and indium phosphide heterojunction nanowire array solar cells

Yoshimura, Masatoshi; Nakai, Eiji; Tomioka, Katsuhiro et al.

Applied Physics Letters, 2013, 103(24), 243111

Permalink : https://hdl.handle.net/2115/54804

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アクセス権
open access
URI
https://hdl.handle.net/2115/54804
タイトル
Indium tin oxide and indium phosphide heterojunction nanowire array solar cells
著者
Yoshimura, Masatoshi ; Nakai, Eiji ; Tomioka, Katsuhiro ; Fukui, Takashi
著者名
Yoshimura, Masatoshi
著者名
Nakai, Eiji
e-Rad_Researcher
60519411
著者名
Tomioka, Katsuhiro
e-Rad_Researcher
30240641
著者名
Fukui, Takashi
言語
英語
発行日
2013-12-09
出版者
American Institute of Physics
収録物名
Applied Physics Letters
巻(号)
103(24)
ページ
243111
抄録
Heterojunction solar cells were formed with a position-controlled InP nanowire array sputtered with indium tin oxide (ITO). The ITO not only acted as a transparent electrode but also as forming a photovoltaic junction. The devices exhibited an open-circuit voltage of 0.436 V, short-circuit current of 24.8 mA/cm(2), and fill factor of 0.682, giving a power conversion efficiency of 7.37% under AM1.5G illumination. The internal quantum efficiency of the device was higher than that of the world-record InP cell in the short wavelength range. (C) 2013 AIP Publishing LLC.
資源タイプ
学術雑誌論文
出版タイプ
Version of Record
権利情報
Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 103, 243111(2013) and may be found at http://scitation.aip.org/content/aip/journal/apl/103/24/10.1063/1.4847355/
PISSN
0003-6951
関連情報 (isIdenticalTo)
出版社版DOI
https://doi.org/10.1063/1.4847355