Fabrication and characterization of freestanding GaAs/AlGaAs core-shell nanowires and AlGaAs nanotubes by using selective-area metalorganic vapor phase epitaxy

Noborisaka, J.; Motohisa, J.; Hara, S. et al.

Applied Physics Letters, 2005, 87(9)

Permalink : https://hdl.handle.net/2115/5503

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アクセス権
open access
URI
https://hdl.handle.net/2115/5503
タイトル
Fabrication and characterization of freestanding GaAs/AlGaAs core-shell nanowires and AlGaAs nanotubes by using selective-area metalorganic vapor phase epitaxy
著者
Noborisaka, J. ; Motohisa, J. ; Hara, S. ; Fukui, T.
著者名
Noborisaka, J.
e-Rad_Researcher
60212263
著者名
Motohisa, J.
e-Rad_Researcher
50374616
著者名
Hara, S.
原, 真二郎
著者名
Fukui, T.
言語
英語
発行日
2005-08-29
出版者
American Institute of Physics
収録物名
Applied Physics Letters
巻(号)
87(9)
抄録
We fabricated GaAs/AlGaAs core-shell nanowires by using selective-area metalorganic vapor phase epitaxy. First, GaAs nanowires were selectively grown on partially masked GaAs (111)B substrates; then AlGaAs was grown to form freestanding heterostructured nanowires. Investigation of nanowire diameter as a function of AlGaAs growth time suggested that the AlGaAs was grown on the sidewalls of the GaAs nanowires, forming GaAs/AlGaAs core-shell structures. Microphotoluminescence measurements of GaAs and GaAs/AlGaAs core-shell nanowires reveal an enhancement of photoluminescence intensity in GaAs/AlGaAs core-shell structures. Based on these core-shell nanowires, AlGaAs nanotubes were formed by using anisotropic dry etching and wet chemical preferential etching to confirm the formation of a core-shell structure and to explore a new class of materials.
資源タイプ
学術雑誌論文
出版タイプ
Version of Record
権利情報
Copyright © 2005 American Institute of Physics
PISSN
0003-6951
関連情報
URI
http://www.aip.org/
関連情報 (isIdenticalTo)
出版社版DOI
https://doi.org/10.1063/1.2035332