Realization of InAs-based two-dimensional artificial lattice by selective area metalorganic vapor phase epitaxy

Mohan, Premila; Motohisa, Junichi; Fukui, Takashi

Applied Physics Letters, 2004, 84(14), 2664-2666

Permalink : https://hdl.handle.net/2115/5508

このアイテムのアクセス数:1,295件（2026-02-12 21:37 集計）

ファイル	フォーマット	サイズ	閲覧回数	説明
APL84-14	pdf	312 KB	1,396

アクセス権	open access
URI	https://hdl.handle.net/2115/5508
タイトル	Realization of InAs-based two-dimensional artificial lattice by selective area metalorganic vapor phase epitaxy
著者	Mohan, Premila ; Motohisa, Junichi ; Fukui, Takashi
著者名 Mohan, Premila
e-Rad_Researcher 60212263 著者名 Motohisa, Junichi 本久, 順一
e-Rad_Researcher 30240641 著者名 Fukui, Takashi
言語	英語
発行日	2004-04-05
出版者	American Institute of Physics
収録物名	Applied Physics Letters
巻(号)	84(14)
ページ	2664-2666
抄録	The experimental realization of two-dimensional semiconductor artificial lattice based on InAs quantum wires is reported here. Artificial Kagome lattice fabricated using InAs quantum wires of unit cell size 0.7 mm has been theoretically proved to show ferromagnetism. Fabrication of such a structure with InAs quantum wires was attempted by selective area metalorganic vapor phase epitaxy using GaAs (111)A substrates. Temperature-dependent growth mode change was observed and Volmer-Weber growth mode at high temperature inhibited the formation of uniform structure. Low temperature and low AsH3 partial pressure resulted in the successful fabrication of 0.7 μm period InAs-based Kagome lattice structure.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	Copyright © 2004 American Institute of Physics
PISSN	0003-6951
関連情報	URI http://www.aip.org/
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1063/1.1697645