Fabrication of semiconductor Kagome lattice structure by selective area metalorganic vapor phase epitaxy

Mohan, Premila; Nakajima, Fumito; Akabori, Masashi; Motohisa, Junichi; Fukui, Takashi

Fabrication of semiconductor Kagome lattice structure by selective area metalorganic vapor phase epitaxy

Mohan, Premila; Nakajima, Fumito; Akabori, Masashi et al.

Applied Physics Letters, 2003, 83(4), 689-691

Permalink : https://hdl.handle.net/2115/5519

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アクセス権	open access
URI	https://hdl.handle.net/2115/5519
タイトル	Fabrication of semiconductor Kagome lattice structure by selective area metalorganic vapor phase epitaxy
著者	Mohan, Premila ; Nakajima, Fumito ; Akabori, Masashi ; Motohisa, Junichi ; Fukui, Takashi
著者名 Mohan, Premila
著者名 Nakajima, Fumito
著者名 Akabori, Masashi
e-Rad_Researcher 60212263 著者名 Motohisa, Junichi 本久, 順一
e-Rad_Researcher 30240641 著者名 Fukui, Takashi
言語	英語
発行日	2003-07-28
出版者	American Institute of Physics
収録物名	Applied Physics Letters
巻(号)	83(4)
ページ	689-691
抄録	Artificial two-dimensional semiconductor Kagome lattice structures formed by quantum wires can show ferromagnetism when the flatband is half filled, even though it does not have any magnetic elements. Experimental realization of such a Kagome lattice structure is reported. The structure, with different pattern periods, was formed with GaAs quantum wires by selective area metalorganic vapor phase epitaxy on GaAs (111)B substrates. To overcome the lateral overgrowth and to improve the shape of smaller period pattern, flow rate modulation epitaxy was employed and a GaAs Kagome lattice structure with 1 μm period was effectively grown.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	Copyright © 2003 American Institute of Physics
PISSN	0003-6951
関連情報	URI http://www.aip.org/
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1063/1.1593823