Fabrication of single- or double-row aligned self-assembled quantum dots by utilizing SiO2-patterned vicinal (001) GaAs substrates

Kim, Hyo Jin; Motohisa, Junichi; Fukui, Takashi

Applied Physics Letters, 2002, 81(27), 5147-5149

Permalink : https://hdl.handle.net/2115/5521

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アクセス権
open access
URI
https://hdl.handle.net/2115/5521
タイトル
Fabrication of single- or double-row aligned self-assembled quantum dots by utilizing SiO2-patterned vicinal (001) GaAs substrates
著者
Kim, Hyo Jin ; Motohisa, Junichi ; Fukui, Takashi
著者名
Kim, Hyo Jin
e-Rad_Researcher
60212263
著者名
Motohisa, Junichi
本久, 順一
e-Rad_Researcher
30240641
著者名
Fukui, Takashi
言語
英語
発行日
2002-12-30
出版者
American Institute of Physics
収録物名
Applied Physics Letters
巻(号)
81(27)
ページ
5147-5149
抄録
We investigated the formation of In0.8Ga0.2As self-assembled quantum dots (SAQDs) grown on SiO2-patterned 1°, 2°, and 5°-off (001) GaAs substrates by selective area metalorganic vapor phase epitaxy technique. The SiO2 patterns were filled with various stripe opening windows along the misorientation direction of the substrates. During the growth of the GaAs buffer layer on the opening regions, the steps on the (001) top facet was affected by the widths of the (001) top facet and the misorientation angles of the substrates. Single- or double-row aligned In0.8Ga0.2As SAQDs having definite interval were successfully fabricated on the (001) top facet with optimized top width and periodicity of step bunching. These results indicate that the selective growth technique of SAQDs by utilizing SiO2-patterned vicinal substrates is promising for nanoelectronic device applications such as single-electron memory devices.
資源タイプ
学術雑誌論文
出版タイプ
Version of Record
権利情報
Copyright © 2002 American Institute of Physics
PISSN
0003-6951
関連情報
URI
http://www.aip.org/
関連情報 (isIdenticalTo)
出版社版DOI
https://doi.org/10.1063/1.1534385