Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates

Motohisa, J.; Noborisaka, J.; Takeda, J.; Inari, M.; Fukui, T.

Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates

Motohisa, J.; Noborisaka, J.; Takeda, J. et al.

Journal of Crystal Growth, 2004, 272(1-4), 180-185

Permalink : https://hdl.handle.net/2115/5525

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アクセス権	open access
URI	https://hdl.handle.net/2115/5525
タイトル	Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates
著者	Motohisa, J. ; Noborisaka, J. ; Takeda, J. ; Inari, M. ; Fukui, T.
e-Rad_Researcher 60212263 著者名 Motohisa, J. 本久, 順一
著者名 Noborisaka, J.
著者名 Takeda, J.
著者名 Inari, M.
e-Rad_Researcher 30240641 著者名 Fukui, T.
言語	英語
キーワード	A2. Selective area growth
	A3. Metalorganic vapor-phase epitaxy
	B1. Nanowires
発行日	2004-12-10
出版者	Elsevier B.V.
収録物名	Journal of Crystal Growth
巻(号)	272(1-4)
ページ	180-185
抄録	We report on a catalyst-free approach for the growth of semiconductor nanowires which is attracting interest as building blocks for nanoscale electronics and circuits. Our approach is based on selective-area MOVPE and nanowires are grown from small circular openings of SiO2 mask defined on (1 1 1)B-oriented substrates. At optimized conditions, extremely uniform array of GaAs and InGaAs nanowires with diameter of about 200nm was grown on GaAs and InP substrates, respectively. The nanowires have hexagonal cross-section and are perpendicular to the substrates, indicating that they are surrounded by (110) facet sidewalls. By reducing the mask opening size, nanowires with diameter down to 50nm and length more than 5μm were successfully formed. Photoluminescence and transmission electron microscopy characterization was also carried out.
資源タイプ	学術雑誌論文
出版タイプ	Accepted Manuscript
PISSN	0022-0248
関連情報	URI http://www.sciencedirect.com/science/journal/00220248
関連情報 (isVersionOf)	出版社版DOI https://doi.org/10.1016/j.jcrysgro.2004.08.118