Growth of GaAs/AlGaAs hexagonal pillars on GaAs (1 1 1)B surfaces by selective-area MOVPE

Motohisa, J.; Takeda, J.; Inari, M.; Noborisaka, J.; Fukui, T.

Growth of GaAs/AlGaAs hexagonal pillars on GaAs (1 1 1)B surfaces by selective-area MOVPE

Motohisa, J.; Takeda, J.; Inari, M. et al.

Physica E: Low-dimensional Systems and Nanostructures, 2004, 23(3-4), 298-304

Permalink : https://hdl.handle.net/2115/5526

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アクセス権	open access
URI	https://hdl.handle.net/2115/5526
タイトル	Growth of GaAs/AlGaAs hexagonal pillars on GaAs (1 1 1)B surfaces by selective-area MOVPE
著者	Motohisa, J. ; Takeda, J. ; Inari, M. ; Noborisaka, J. ; Fukui, T.
e-Rad_Researcher 60212263 著者名 Motohisa, J. 本久, 順一
著者名 Takeda, J.
著者名 Inari, M.
著者名 Noborisaka, J.
e-Rad_Researcher 30240641 著者名 Fukui, T.
言語	英語
キーワード	Metalorganic vapor phase epitaxy
	Selective area growth
	Photonic crystals
	Nanowires
発行日	2004-07
出版者	Elsevier B.V.
収録物名	Physica E: Low-dimensional Systems and Nanostructures
巻(号)	23(3-4)
ページ	298-304
抄録	We report on the growth of GaAs and GaAs/AlGaAs heterostructured hexagonal pillar structures using selective area (SA) metalorganic vapor phase epitaxy (MOVPE). By performing growth on SiO2-masked (1 1 1)B GaAs substrates with circular or hexagonal hole openings, extremely uniform array of hexagonal GaAs/AlGaAs pillars consisting {1 1 0} vertical facets with their diameter of order of 100 nm were obtained. Unexpectedly, strong intense light emission was observed for the room temperature photoluminescence measurement of the pillar arrays in triangular lattice, which is promising for the application to the photonic crystals to enhance the light extraction efficiency from the materials with high refractive index. Furthermore, it was also found that hexagonal pillars with size 60 nm and large aspect ratio (>100) by reducing the size of initial hole size of mask, opening a possibility to grow nanowires using epitaxial growth.
資源タイプ	学術雑誌論文
出版タイプ	Accepted Manuscript
PISSN	1386-9477
関連情報	URI http://www.sciencedirect.com/science/journal/13869477
関連情報 (isVersionOf)	出版社版DOI https://doi.org/10.1016/j.physe.2003.11.279