open access

https://hdl.handle.net/2115/5537

Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence

英語

2005-01

American Institute of Physics

Applied Physics Letters

86

052105

We investigated the minority carrier diffusion length in p- and n-GaN by performing electron-beam-induced current measurements of GaN p–n junction diodes. Minority electron diffusion length in p-GaN strongly depended on the Mg doping concentration for relatively low dislocation density below 10(8) cm(–2). It increased from 220 to 950 nm with decreasing Mg doping concentration from 3×10(19) to 4×10(18) cm(–3). For relatively high dislocation density above 10(9) cm(–2), it was less than 300 nm and independent of the Mg doping concentration. On the other hand, the minority hole diffusion length in n-GaN was shorter than 250 nm and less affected by the dislocation density and Si doping concentration. We discuss the doping-concentration and dislocation-density dependence of minority carrier diffusion length.

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Copyright © 2005 American Institute of Physics

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