Leakage mechanism in GaN and AlGaN Schottky interfaces

Hashizume, Tamotsu; Kotani, Junji; Hasegawa, Hideki

Leakage mechanism in GaN and AlGaN Schottky interfaces

Hashizume, Tamotsu; Kotani, Junji; Hasegawa, Hideki

Applied Physics Letters, 2004, 84(24), 4884-4886

Permalink : https://hdl.handle.net/2115/5538

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アクセス権	open access
URI	https://hdl.handle.net/2115/5538
タイトル	Leakage mechanism in GaN and AlGaN Schottky interfaces
著者	Hashizume, Tamotsu ; Kotani, Junji ; Hasegawa, Hideki
e-Rad_Researcher 80149898 著者名 Hashizume, Tamotsu 橋詰, 保
著者名 Kotani, Junji
e-Rad_Researcher 60001781 著者名 Hasegawa, Hideki
言語	英語
発行日	2004-07-14
出版者	American Institute of Physics
収録物名	Applied Physics Letters
巻(号)	84(24)
ページ	4884-4886
抄録	Based on detailed temperature-dependent current–voltage (I–V–T) measurements the mechanism of leakage currents through GaN and AlGaN Schottky interfaces is discussed. The experiments were compared to calculations based on thin surface barrier model in which the effects of surface defects were taken into account. Our simulation method reproduced the experimental I–V–T characteristics of the GaN and AlGaN Schottky diodes, and gave excellent fitting results to the reported Schottky I–V curves in GaN for both forward and reverse biases at different temperatures. The present results indicate that the barrier thinning caused by unintentional surface-defect donors enhances the tunneling transport processes, leading to large leakage currents through GaN and AlGaN Schottky interfaces.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	Copyright © 2004 American Institute of Physics
PISSN	0003-6951
関連情報	URI http://www.aip.org/
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1063/1.1762980