Effect of indium doping on the transient optical properties of GaN films

Kumano, H.; Hoshi, Ken-ichi; Tanaka, Satoru et al.

Applied Physics Letters, 1999, 75(19), 2879-2881

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アクセス権
open access
URI
https://hdl.handle.net/2115/5539
タイトル
Effect of indium doping on the transient optical properties of GaN films
著者
Kumano, H. ; Hoshi, Ken-ichi ; Tanaka, Satoru ; Suemune, Ikuo
e-Rad_Researcher
70292042
著者名
Kumano, H.
熊野, 英和
著者名
Hoshi, Ken-ichi
著者名
Tanaka, Satoru
e-Rad_Researcher
00112178
著者名
Suemune, Ikuo
言語
英語
発行日
1999-11
出版者
American Institute of Physics
収録物名
Applied Physics Letters
巻(号)
75(19)
ページ
2879-2881
抄録
We have investigated the effects of In doping on the optical properties of GaN films grown by gas-source molecular-beam epitaxy. Time-resolved photoluminescence was carried out to study the transient optical properties of the epitaxial films. In comparison to the undoped GaN film, the spontaneous emission lifetime was prolonged from below 20 to 70 ps by doping with In. Under high-excitation density, stimulated emission was observed from both samples. The threshold excitation density was found to be reduced in the In-doped sample. These significant improvements of the optical properties are attributed to the effective suppression of the formation of the nonradiative recombination centers caused by a change of the growth kinetics induced by a small amount of In supplied during growth of the GaN films.
資源タイプ
学術雑誌論文
出版タイプ
Version of Record
権利情報
Copyright © 1999 American Institute of Physics
PISSN
0003-6951
関連情報
URI
http://www.aip.org/
関連情報 (isIdenticalTo)
出版社版DOI
https://doi.org/10.1063/1.125178