Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric

Hashizume, Tamotsu; Ootomo, Shinya; Hasegawa, Hideki

Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric

Hashizume, Tamotsu; Ootomo, Shinya; Hasegawa, Hideki

Applied Physics Letters, 2003, 83(14), 2952-2954

Permalink : https://hdl.handle.net/2115/5540

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アクセス権	open access
URI	https://hdl.handle.net/2115/5540
タイトル	Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric
著者	Hashizume, Tamotsu ; Ootomo, Shinya ; Hasegawa, Hideki
e-Rad_Researcher 80149898 著者名 Hashizume, Tamotsu 橋詰, 保
著者名 Ootomo, Shinya
著者名 Hasegawa, Hideki
言語	英語
発行日	2003-10-06
出版者	American Institute of Physics
収録物名	Applied Physics Letters
巻(号)	83(14)
ページ	2952-2954
抄録	We investigated effects of electronic states at free surfaces of AlGaN/GaN heterostructure field-effect transistors (HFETs) on the inner current transport at the heterointerfaces. The analysis on transient currents for the air-exposed and H2-plasma-treated devices showed that N-vacancy-related near-surface traps play an important role in current collapse in AlGaN/GaN HFETs. An Al2O3-based surface passivation scheme including an N2-plasma surface treatment was proposed and applied to an insulated-gate HFET. A large conduction-band offset of 2.1 eV was achieved at the Al2O3/Al0.3Ga0.7N interface. No current collapse was observed in the fabricated Al2O3 insulated-gate HFETs under both drain stress and gate stress.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	Copyright © 2003 American Institute of Physics
PISSN	0003-6951
関連情報	URI http://www.aip.org/
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1063/1.1616648