Surface Fermi-level position and gap state distribution of InGaP surface grown by metalorganic vapor-phase epitaxy

Hashizume, Tamotsu

Applied Physics Letters, 2002, 81(13), 2382-2384

Permalink : https://hdl.handle.net/2115/5541

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アクセス権	open access
URI	https://hdl.handle.net/2115/5541
タイトル	Surface Fermi-level position and gap state distribution of InGaP surface grown by metalorganic vapor-phase epitaxy
著者	e-Rad_Researcher 80149898 著者名 Hashizume, Tamotsu 橋詰, 保
言語	英語
発行日	2002-09-23
出版者	American Institute of Physics
収録物名	Applied Physics Letters
巻(号)	81(13)
ページ	2382-2384
抄録	Electronic properties of "free" n-In0.49Ga0.51P surfaces grown by metalorganic vapor-phase epitaxy were directly characterized using the contactless capacitance–voltage technique. The HCl-treated surface showed a wide and continuous distribution of surface state density (Dss) in energy with relatively low densities, leading to no pronounced Fermi-level pinning effect on the surface. The minimum Dss value was determined to be 8×10(11) cm(–2) eV(–1). The surface Fermi-level position was found at 1.2 eV above the valence band maximum, consistent with the x-ray photoelectron spectroscopy results.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	Copyright © 2002 American Institute of Physics
PISSN	0003-6951
関連情報	URI http://www.aip.org/
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1063/1.1509119