Discrete surface state related to nitrogen-vacancy defect on plasma-treated GaN surfaces

Hashizume, Tamotsu; Nakasaki, Ryusuke

Applied Physics Letters, 2002, 80(24), 4564-4566

Permalink : https://hdl.handle.net/2115/5543

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アクセス権	open access
URI	https://hdl.handle.net/2115/5543
タイトル	Discrete surface state related to nitrogen-vacancy defect on plasma-treated GaN surfaces
著者	e-Rad_Researcher 80149898 著者名 Hashizume, Tamotsu 橋詰, 保
著者	著者名 Nakasaki, Ryusuke
言語	英語
発行日	2002-07-17
出版者	American Institute of Physics
収録物名	Applied Physics Letters
巻(号)	80(24)
ページ	4564-4566
抄録	Detailed studies on the defect-related surface states of plasma-exposed n-GaN surfaces were carried out. An anomalous flat portion appeared in the metal–insulator–semiconductor capacitance–voltage characteristics for the sample exposed to H2 plasma, corresponding to a localized peak at EC–0.5 eV in the surface state density distribution. Atomic-force microscope and x-ray photoemission studies revealed the formation of Ga droplets on H2-plasma-treated GaN surfaces, caused by the desorption of nitrogen atoms in the form of NHx. These results suggested that a nitrogen-vacancy-related state near the conduction-band edge was introduced on the H2-plasma-treated GaN surface. No such effects took place on the N2-plasma-treated GaN surfaces.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	http://www.aip.org/
権利情報	Copyright © 2002 American Institute of Physics
PISSN	0003-6951
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1063/1.1485309