Highly conductive GaAsNSe alloys grown on GaAs and their nonalloyed ohmic properties

Uesugi, Katsuhiro; Suemune, Ikuo

Highly conductive GaAsNSe alloys grown on GaAs and their nonalloyed ohmic properties

Uesugi, Katsuhiro; Suemune, Ikuo

Applied Physics Letters, 2001, 79(20), 3284-3286

Permalink : https://hdl.handle.net/2115/5573

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アクセス権	open access
URI	https://hdl.handle.net/2115/5573
タイトル	Highly conductive GaAsNSe alloys grown on GaAs and their nonalloyed ohmic properties
著者	e-Rad_Researcher 70261352 著者名 Uesugi, Katsuhiro 植杉, 克弘
著者	e-Rad_Researcher 00112178 著者名 Suemune, Ikuo
言語	英語
発行日	2001-11-12
出版者	American Institute of Physics
収録物名	Applied Physics Letters
巻(号)	79(20)
ページ	3284-3286
抄録	Doping properties of Se in GaAsN alloys grown on GaAs (001) substrates by metalorganic-molecular-beam epitaxy were studied. Ditertiarybutylselenide (DtBSe) precursor was used as a Se source. It was found that Se was incorporated into GaAs and GaAsN layers up to a considerable concentration of ~15%. It was also suggested that the N concentrations in GaAsNSe layers were increased by the DtBSe supply. The GaAsNSe layers were heavily doped n type, and the maximum electron concentration was as high as ~1×10(20) cm(–3). With the increase of the carrier concentrations, the resistivity of GaAsNSe dramatically decreased to 1.2×10(–4) Ω cm. This made it possible to have ohmic contacts without thermal annealing, which indicates that GaAsNSe alloys are an attractive candidate for the formation of nonalloyed ohmic contacts.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	Copyright © 2001 American Institute of Physics
PISSN	0003-6951
関連情報	URI http://www.aip.org/
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1063/1.1418449