Temperature dependence of band gap energies of GaAsN alloys

Uesugi, Katsuhiro; Suemune, Ikuo; Hasegawa, Tatsuo; Akutagawa, Tomoyuki; Nakamura, Takayoshi

Temperature dependence of band gap energies of GaAsN alloys

Uesugi, Katsuhiro; Suemune, Ikuo; Hasegawa, Tatsuo et al.

Applied Physics Letters, 2000, 76(10), 1285-1287

Permalink : https://hdl.handle.net/2115/5574

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アクセス権	open access
URI	https://hdl.handle.net/2115/5574
タイトル	Temperature dependence of band gap energies of GaAsN alloys
著者	Uesugi, Katsuhiro ; Suemune, Ikuo ; Hasegawa, Tatsuo ; Akutagawa, Tomoyuki ; Nakamura, Takayoshi
e-Rad_Researcher 70261352 著者名 Uesugi, Katsuhiro 植杉, 克弘
e-Rad_Researcher 00112178 著者名 Suemune, Ikuo
著者名 Hasegawa, Tatsuo
e-Rad_Researcher 60271631 著者名 Akutagawa, Tomoyuki
e-Rad_Researcher 60270790 著者名 Nakamura, Takayoshi
言語	英語
発行日	2000-03-06
出版者	American Institute of Physics
収録物名	Applied Physics Letters
巻(号)	76(10)
ページ	1285-1287
抄録	The temperature dependence of band gap energies of GaAsN alloys was studied with absorption measurements. As the N concentration in GaAsN increased, the temperature dependence of the band gap energy was clearly reduced in comparison with that of GaAs. The redshift of the absorption edge in GaAsN for the temperature increase from 25 to 297 K was reduced to 60% of that of GaAs for the N concentration larger than ~1%. The differential temperature coefficient of the energy gap at room temperature was also reduced to 70% of that of GaAs. The main factor for this reduced temperature dependence in GaAsN was attributed to the transition from band-like states to nitrogen-related localized states with detailed studies of the temperature-induced shift of the absorption edge.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	Copyright © 2000 American Institute of Physics
PISSN	0003-6951
関連情報	URI http://www.aip.org/
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1063/1.126010