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論文情報

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アクセス権	open access
URI	https://hdl.handle.net/2115/5576
タイトル	Epitaxial growth of zinc-blende ZnSe/MgS superlattices on (001) GaAs
著者	Uesugi, Katsuhiro ; Obinata, Toshio ; Suemune, Ikuo ; Kumano, Hidekazu ; Nakahara, Jun'ichiro
e-Rad_Researcher 70261352 著者名 Uesugi, Katsuhiro 植杉, 克弘
著者名 Obinata, Toshio
e-Rad_Researcher 00112178 著者名 Suemune, Ikuo
e-Rad_Researcher 70292042 著者名 Kumano, Hidekazu
e-Rad_Researcher 30013527 著者名 Nakahara, Jun'ichiro
言語	英語
発行日	1996-02-05
出版者	American Institute of Physics
収録物名	Applied Physics Letters
巻(号)	68(6)
ページ	844-846
抄録	We report the growth of zinc-blende ZnSe/MgS superlattices (SLs) on GaAs (001) substrates. The SLs were grown with metalorganic vapor phase epitaxy by selecting appropriate precursors for Mg and S. MgS naturally forms rocksalt structures, but zinc-blende MgS layers were grown. The lattice constant of MgS was estimated to be 5.59 Å. X-ray diffraction measurements show that the ZnSe/MgS SLs are grown coherently to the GaAs substrates up to the total thicknesses of ~ 3000 Å.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	IEEE, American Institute of Physics, 68, 6, 1996, p844-846 ©1996 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.”
PISSN	0018-9464
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1063/1.116552

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