Pt Schottky diode gas sensors formed on GaN and AlGaN/GaN heterostructure

Matsuo, Kazushi; Negoro, Noboru; Kotani, Junji et al.

Applied Surface Science, 2005, 244(1-4), 273-276

Permalink : https://hdl.handle.net/2115/5596

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アクセス権	open access
URI	https://hdl.handle.net/2115/5596
タイトル	Pt Schottky diode gas sensors formed on GaN and AlGaN/GaN heterostructure
著者	Matsuo, Kazushi ; Negoro, Noboru ; Kotani, Junji ; Hashizume, Tamotsu ; Hasegawa, Hideki
著者名 Matsuo, Kazushi
著者名 Negoro, Noboru
著者名 Kotani, Junji
e-Rad_Researcher 80149898 著者名 Hashizume, Tamotsu 橋詰, 保
e-Rad_Researcher 60001781 著者名 Hasegawa, Hideki
言語	英語
キーワード	GaN
	AlGaN
	Pt
	Schottky
	Gas sensor
発行日	2005-05-15
出版者	Elsevier B.V.
収録物名	Applied Surface Science
巻(号)	244(1-4)
ページ	273-276
抄録	Exposure of Pt/GaN and Pt/AlGaN/GaN Schottky diodes to H2 gas at moderately high temperatures around 100 °C resulted in marked increase of forward and reverse currents. Increase was much larger in the Pt/AlGaN/GaN diode than in the Pt/GaN diode. Rapid turn-on responses and somewhat slower turn-off responses were observed with reproducible response magnitudes. A rigorous computer simulation of I–V curves indicated that current changes are due to changes in the Schottky barrier height caused either by H-induced formation of interfacial dipole or by hydrogen passivation of interface states.
資源タイプ	学術雑誌論文
出版タイプ	Accepted Manuscript
PISSN	0169-4332
関連情報	URI http://www.sciencedirect.com/science/journal/01694332
関連情報 (isVersionOf)	出版社版DOI https://doi.org/10.1016/j.apsusc.2004.10.149