Mechanism of current leakage through metal/n-GaN interfaces

Oyama, Susumu; Hashizume, Tamotsu; Hasegawa, Hideki

Applied Surface Science, 2002, 190(1-4), 322-325

Permalink : https://hdl.handle.net/2115/5599

このアイテムのアクセス数:1,465件（2026-03-12 22:30 集計）

ファイル	フォーマット	サイズ	閲覧回数	説明
ASS190(1-4)	pdf	104 KB	2,416

アクセス権	open access
URI	https://hdl.handle.net/2115/5599
タイトル	Mechanism of current leakage through metal/n-GaN interfaces
著者	Oyama, Susumu ; Hashizume, Tamotsu ; Hasegawa, Hideki
著者名 Oyama, Susumu
e-Rad_Researcher 80149898 著者名 Hashizume, Tamotsu 橋詰, 保
e-Rad_Researcher 60001781 著者名 Hasegawa, Hideki
言語	英語
キーワード	GaN
	Schottky
	Leakage current
	Tunneling
	Thermionic-field emission
	Surface trap
発行日	2002-05-08
出版者	Elsevier Science B.V.
収録物名	Applied Surface Science
巻(号)	190(1-4)
ページ	322-325
抄録	Detailed current–voltage–temperature (I–V–T) measurements were performed on the Schottky diodes fabricated on MOVPE-grown n-GaN layers. A large deviation from the thermionic emission (TE) transport was observed in the reverse I–V curves with a large excess leakage. From the calculation based on the thermionic-field emission (TFE) model, it was found that the tunneling plays an important role in the carrier transport across the GaN Schottky barrier even for doping densities as low as 1×10(17) cm(−3). A novel barrier-modified TFE model based on presence of near-surface fixed charges or surface states is proposed to explain the observed large reverse leakage currents.
資源タイプ	学術雑誌論文
出版タイプ	Accepted Manuscript
PISSN	0169-4332
関連情報	URI http://www.sciencedirect.com/science/journal/01694332
関連情報 (isVersionOf)	出版社版DOI https://doi.org/10.1016/S0169-4332(01)00902-3