Current increment of tunnel field-effect transistor using InGaAs nanowire/Si heterojunction by scaling of channel length

Tomioka, Katsuhiro; Fukui, Takashi

Applied Physics Letters, 2014, 104(7), 073507

Permalink : https://hdl.handle.net/2115/56399

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アクセス権
open access
URI
https://hdl.handle.net/2115/56399
タイトル
Current increment of tunnel field-effect transistor using InGaAs nanowire/Si heterojunction by scaling of channel length
著者
e-Rad_Researcher
60519411
著者名
Tomioka, Katsuhiro
e-Rad_Researcher
30240641
著者名
Fukui, Takashi
言語
英語
発行日
2014-02-19
出版者
American Institute of Physics
収録物名
Applied Physics Letters
巻(号)
104(7)
ページ
073507
抄録
We report on a fabrication of tunnel field-effect transistors using InGaAs nanowire/Si heterojunctions and the characterization of scaling of channel lengths. The devices consisted of single InGaAs nanowires with a diameter of 30 nm grown on p-type Si(111) substrates. The switch demonstrated steep subthreshold-slope (30 mV/decade) at drain-source voltage (V-DS) of 0.10 V. Also, pinch-off behavior appeared at moderately low VDS, below 0.10 V. Reducing the channel length of the transistors attained a steep subthreshold slope (< 60 mV/decade) and enhanced the drain current, which was 100 higher than that of the longer channels. (C) 2014 AIP Publishing LLC.
資源タイプ
学術雑誌論文
出版タイプ
Version of Record
権利情報
Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 104, 073507(2014) and may be found at http://scitation.aip.org/content/aip/journal/apl/104/7/10.1063/1.4865921
PISSN
0003-6951
関連情報 (isIdenticalTo)
出版社版DOI
https://doi.org/10.1063/1.4865921