open access

https://hdl.handle.net/2115/56990

Theoretical modeling of spin quantum cross structure devices with noncollinear ferromagnetic electrodes

英語

2010-05-01

American Institute of Physics

Journal of applied physics

107(9)

09C709-1-09C709-3

Recently, we have proposed a spin quantum cross structure (SQCS) device toward the realization of novel switching devices. The SQCS device consists of two ferromagneticmetalthin films with their edges facing each other at an angle of θ, and sandwiches a few molecules and atoms. In this paper, the calculation of electronic transport has been performed for SQCS devices with the Ni noncollinear magnetic films as both electrodes within the framework of the Anderson Hamiltonian, taking into consideration both polar angle θ, and azimuthal angle ϕ. We have obtained the general noncollinear spin transport formula, and the polar angle dependence of current-voltage characteristics of SQCS devices. The noncollinear spin transport is determined only by the angle θ defined by the inner product of two spins. Also, it is implied that SQCS devices can serve as multivalued memory devices by varying the angle θ.

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Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at http://scitation.aip.org/content/aip/journal/jap/107/9/10.1063/1.3357330.

0021-8979

1089-7550

AA00693547