Dielectric properties of organic monolayers directly bonded on silicon probed by current sensing atomic force microscope

Zhao, Jianwei; Uosaki, Kohei

Applied Physics Letters, 2003, 83(10), 2034-2036

Permalink : https://hdl.handle.net/2115/5701

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アクセス権	open access
URI	https://hdl.handle.net/2115/5701
タイトル	Dielectric properties of organic monolayers directly bonded on silicon probed by current sensing atomic force microscope
著者	著者名 Zhao, Jianwei
著者	e-Rad_Researcher 20133697 著者名 Uosaki, Kohei 魚崎, 浩平
言語	英語
発行日	2003-09-08
出版者	American Institute of Physics
収録物名	Applied Physics Letters
巻(号)	83(10)
ページ	2034-2036
抄録	The dielectric properties of alkyl monolayers with various chain lengths [CH3(CH2)n–1- (n = 12, 14, 16, and 18)] covalently bonded to a hydrogen terminated n-type silicon (111) surface in a nanoscale region were evaluated using current sensing atomic force microscopy (AFM). A reliable electrical contact between the alkyl monolayers and the metal-coated AFM tip was achieved under slight stress. At a force less than 2 nN, current sharply increased as the bias was scanned over a critical value, showing that breakdown took place. The breakdown voltage linearly depended on the chain length of the alkyl monolayers and the dielectric strength of 2.0 GV/m was derived from the slope of this relation.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	Copyright © 2003 American Institute of Physics
PISSN	0003-6951
関連情報	URI http://www.aip.org/
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1063/1.1609237