Effect of CoFe insertion in Co2MnSi/CoFe/n-GaAs junctions on spin injection properties

Ebina, Yuya; Akiho, Takafumi; Liu, Hong-xi; Yamamoto, Masafumi; Uemura, Tetsuya

Effect of CoFe insertion in Co2MnSi/CoFe/n-GaAs junctions on spin injection properties

Ebina, Yuya; Akiho, Takafumi; Liu, Hong-xi et al.

Applied Physics Letters, 2014, 104(17), 172405

Permalink : https://hdl.handle.net/2115/57041

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アクセス権	open access
URI	https://hdl.handle.net/2115/57041
タイトル	Effect of CoFe insertion in Co2MnSi/CoFe/n-GaAs junctions on spin injection properties
著者	Ebina, Yuya ; Akiho, Takafumi ; Liu, Hong-xi ; Yamamoto, Masafumi ; Uemura, Tetsuya
著者名 Ebina, Yuya
著者名 Akiho, Takafumi
著者名 Liu, Hong-xi
e-Rad_Researcher 10322835 著者名 Yamamoto, Masafumi
e-Rad_Researcher 20344476 著者名 Uemura, Tetsuya
言語	英語
発行日	2014-05-01
出版者	American Institute of Physics
収録物名	Applied Physics Letters
巻(号)	104(17)
ページ	172405
抄録	The CoFe thickness (t(CoFe)) dependence of spin injection efficiency was investigated for Co2MnSi/CoFe/n-GaAs junctions. The Delta V-NL/I value, which is a measure of spin injection efficiency, strongly depended on t(CoFe), where Delta V-NL is the amplitude of a nonlocal spin-valve signal, and I is an injection current. Importantly, the maximum value of Delta V-NL/I for a Co2MnSi/CoFe/n-GaAs junction was one order of magnitude higher than that for a CoFe/n-GaAs junction, indicating that a Co2MnSi electrode works as a highly polarized spin source. No clear spin signal, on the other hand, was observed for a Co2MnSi/n-GaAs junction due to diffusion of Mn atoms into the GaAs channel. Secondary ion mass spectrometry analysis indicated that the CoFe insertion effectively suppressed the diffusion of Mn into GaAs, resulting in improved spin injection properties compared with those for a Co2MnSi/n-GaAs junction. (C) 2014 AIP Publishing LLC.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 104, 172405 (2014) and may be found at http://scitation.aip.org/content/aip/journal/apl/104/17/10.1063/1.4873720
PISSN	0003-6951
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1063/1.4873720