Surface flatness of polycrystalline copper after argon ion etching followed by annealing

Hino, T.; Taguchi, T.; Yamauchi, Y. et al.

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2004, 22(6), 2632-2634

Permalink : https://hdl.handle.net/2115/5710

このアイテムのアクセス数:1,491件（2026-04-16 02:31 集計）

ファイル	フォーマット	サイズ	閲覧回数	説明
JVSTB22-6	pdf	149 KB	1,237

アクセス権	open access
URI	https://hdl.handle.net/2115/5710
タイトル	Surface flatness of polycrystalline copper after argon ion etching followed by annealing
著者	Hino, T. ; Taguchi, T. ; Yamauchi, Y. ; Hirohata, Y. ; Nishikawa, M.
e-Rad_Researcher 30109491 著者名 Hino, T. 日野, 友明
著者名 Taguchi, T.
著者名 Yamauchi, Y.
著者名 Hirohata, Y.
著者名 Nishikawa, M.
言語	英語
発行日	2004-11-04
出版者	AVS Science & Technology of Materials Interfaces, and Processing
収録物名	Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
巻(号)	22(6)
ページ	2632-2634
抄録	Oblique injection of argon ions with energy of 1 keV was conducted for etching of polycrystalline copper. The surface became rough owing to the formation of blisters. The average diameter and height of blisters was approximately 150 and 20–30 nm, respectively. The polycrystalline copper irradiated by argon ions was annealed to rupture the blisters. The retained argon desorbed in the temperature range from 500 to 800 K. The height of blisters significantly reduced to 10–15 nm although the diameter and surface density of blisters roughly remained the same.
資源タイプ	学術雑誌論文
出版タイプ	Accepted Manuscript
PISSN	1071-1023
関連情報 (isVersionOf)	出版社版DOI https://doi.org/10.1116/1.1814110