Tunneling through a narrow-gap semiconductor with different conduction- and valence-band effective masses

Hatta, E.; Nagao, J.; Mukasa, K.

Tunneling through a narrow-gap semiconductor with different conduction- and valence-band effective masses

Hatta, E.; Nagao, J.; Mukasa, K.

Journal of Applied Physics, 1996, 79(3), 1511-1514

Permalink : https://hdl.handle.net/2115/5716

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アクセス権	open access
URI	https://hdl.handle.net/2115/5716
タイトル	Tunneling through a narrow-gap semiconductor with different conduction- and valence-band effective masses
著者	Hatta, E. ; Nagao, J. ; Mukasa, K.
e-Rad_Researcher 90238022 著者名 Hatta, E. 八田, 英嗣
著者名 Nagao, J.
著者名 Mukasa, K.
言語	英語
発行日	1996-02-01
出版者	American Institute of Physics
収録物名	Journal of Applied Physics
巻(号)	79(3)
ページ	1511-1514
抄録	We have calculated tunneling conductance in metal–narrow-gap-semiconductor (NGS)–metal tunnel junctions. Flietner's two-band model is used to describe the dispersion relation within the energy gap in an isotropic NGS with different conduction- and valence-band edge effective masses. The results are compared with the tunneling conductance calculated by Kane's two-band model, which has been commonly used to describe the tunneling characteristics through the energy gap in semiconductors. These results propose that the tunneling conductance in the tunnel junctions in which a narrow gap semiconductor of largely different conduction- and valence-band effective masses is used as a tunneling barrier can exhibit quite a different behavior, especially in the region of the midgap, from the tunneling conductance described by Kane's two-band model.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	Copyright © 1996 American Institute of Physics
PISSN	0021-9606
関連情報	URI http://www.aip.org/
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1063/1.360993