open access

https://hdl.handle.net/2115/57547

Reduced thermal resistance in AlGaN/GaN multi-mesa-channel high electron mobility transistors

英語

2014-08-04

American Institute of Physics

Applied Physics Letters

105(5)

53510

Dramatic reduction of thermal resistance was achieved in AlGaN/GaN Multi-Mesa-Channel (MMC) high electron mobility transistors (HEMTs) on sapphire substrates. Compared with the conventional planar device, the MMC HEMT exhibits much less negative slope of the I-D-V-DS curves at high V-DS regime, indicating less self-heating. Using a method proposed by Menozzi and co-workers, we obtained a thermal resistance of 4.8 K-mm/W at ambient temperature of similar to 350K and power dissipation of similar to 9W/mm. This value compares well to 4.1 K-mm/W, which is the thermal resistance of AlGaN/GaN HEMTs on expensive single crystal diamond substrates and the lowest reported value in literature.

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Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 105, 053510 (2014); doi: 10.1063/1.4892538 and may be found at http://dx.doi.org/10.1063/1.4892538.

0003-6951