Versatile Simple Doping Technique for Diamond by Solid Dopant Source Immersion during Microwave Plasma CVD

Tamura, Takahiro; Yanase, Takashi; Nagahama, Taro et al.

Chemistry Letters, 2014, 43(10), 1569-1571

Permalink : https://hdl.handle.net/2115/57577

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アクセス権	open access
URI	https://hdl.handle.net/2115/57577
タイトル	Versatile Simple Doping Technique for Diamond by Solid Dopant Source Immersion during Microwave Plasma CVD
著者	Tamura, Takahiro ; Yanase, Takashi ; Nagahama, Taro ; Wakeshima, Makoto ; Hinatsu, Yukio ; Shimada, Toshihiro
著者名 Tamura, Takahiro
著者名 Yanase, Takashi
著者名 Nagahama, Taro
著者名 Wakeshima, Makoto
著者名 Hinatsu, Yukio
e-Rad_Researcher 10262148 著者名 Shimada, Toshihiro
言語	英語
発行日	2014-10-05
出版者	The Chemical Society of Japan
収録物名	Chemistry Letters
巻(号)	43(10)
ページ	1569-1571
抄録	We demonstrate a new doping technique for (CVD) growth of diamond. The method involves immersing a solid-state dopant source into the plasma of microwave plasma-assisted CVD. We applied this simple and versatile technique to the growth of boron-doped diamond. The grown films were characterized by X-ray diffraction (XRD), Raman spectroscopy, glow discharge optical emission spectroscopy (GDOES) and electrical conductivity measurement. The average concentration of boron was 0.5 atomic % and the conductivity was 1.5 x 10-2 Ωcm, which showed irregular behavior at low temperature.
資源タイプ	学術雑誌論文
出版タイプ	Accepted Manuscript
PISSN	0366-7022
関連情報 (isVersionOf)	出版社版DOI https://doi.org/10.1246/cl.140598