Impact of artificial lateral quantum confinement on exciton-spin relaxation in a two-dimensional GaAs electronic system

Kiba, Takayuki; Tanaka, Toru; Tamura, Yosuke et al.

AIP Advances, 2014, 4(10), 107112

Permalink : https://hdl.handle.net/2115/57757

このアイテムのアクセス数:1,039件（2026-08-20 03:56 集計）

閲覧可能ファイル 

ファイル フォーマット サイズ 閲覧回数 説明
1.4897958 pdf 1.51 MB 974

論文情報

ファイル出力 EndNote Basic出力 Mendeley出力

アクセス権
open access
URI
https://hdl.handle.net/2115/57757
タイトル
Impact of artificial lateral quantum confinement on exciton-spin relaxation in a two-dimensional GaAs electronic system
著者
Kiba, Takayuki ; Tanaka, Toru ; Tamura, Yosuke ; Higo, Akio ; Thomas, Cedric ; Samukawa, Seiji ; Murayama, Akihiro
e-Rad_Researcher
40567236
著者名
Kiba, Takayuki
著者名
Tanaka, Toru
著者名
Tamura, Yosuke
著者名
Higo, Akio
著者名
Thomas, Cedric
著者名
Samukawa, Seiji
e-Rad_Researcher
00333906
著者名
Murayama, Akihiro
言語
英語
発行日
2014-10-08
出版者
American Institute of Physics
収録物名
AIP Advances
巻(号)
4(10)
ページ
107112
抄録
We demonstrate the effect of artificial lateral quantum confinement on exciton-spin relaxation in a GaAs electronic system. GaAs nanodisks (NDs) were fabricated from a quantum well (QW) by top-down nanotechnology using neutral-beam etching aided by protein-engineered bio-nano-templates. The exciton-spin relaxation time was 1.4 ns due to ND formation, significantly extended compared to 0.44 ns for the original QW, which is attributed to weakening of the hole-state mixing in addition to freezing of the carrier momentum. The temperature dependence of the spin-relaxation time depends on the ND thickness, reflecting the degree of quantum confinement. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
資源タイプ
学術雑誌論文
出版タイプ
Version of Record
権利情報
Creative Commons Attribution-NonCommercial-ShareAlike 2.1 Japan
PISSN
2158-3226
関連情報 (isIdenticalTo)
出版社版DOI
https://doi.org/10.1063/1.4897958