In situ observation of anodic dissolution process of n-GaAs in HCl solution by electrochemical atomic force microscope

Koinuma, Michio; Uosaki, Kohei

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994, 12(3), 1543-1546

Permalink : https://hdl.handle.net/2115/5778

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URI	https://hdl.handle.net/2115/5778
タイトル	In situ observation of anodic dissolution process of n-GaAs in HCl solution by electrochemical atomic force microscope
著者	著者名 Koinuma, Michio
著者	e-Rad_Researcher 20133697 著者名 Uosaki, Kohei 魚崎, 浩平
言語	英語
発行日	1994-05
出版者	American Vacuum Society
収録物名	Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
巻(号)	12(3)
ページ	1543-1546
抄録	Anodic dissolution of a GaAs(100) face was investigated by in situ electrochemical atomic force microscope (AFM). While no surface structure change was observed at –0.6 V (vs Ag/AgCl) where no current flowed, dome structure on surface was removed, and flat surface was obtained after keeping the potential at 0 V (vs Ag/AgCl) where anodic current of ~150 µA cm–2 flowed. An atomically resolved AFM image was obtained in the flat region and shows the surface is dominated by a (111) face after the anodic dissolution.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
PISSN	1071-1023
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1116/1.587282