Pressure dependence of structural and electronic properties of polysilane alloys

Tanaka, Keiji; Nitta, Shoji

PHYSICAL REVIEW B, 1989, 39(5), 3258-3264

Permalink : https://hdl.handle.net/2115/5793

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アクセス権	open access
URI	https://hdl.handle.net/2115/5793
タイトル	Pressure dependence of structural and electronic properties of polysilane alloys
著者	e-Rad_Researcher 20002313 著者名 Tanaka, Keiji 田中, 啓司
著者	著者名 Nitta, Shoji
言語	英語
発行日	1989-02
出版者	American Physical Society
収録物名	PHYSICAL REVIEW B
巻(号)	39(5)
ページ	3258-3264
抄録	Pressure effects on structure and physical properties in quasi-one-dimensional a-Si:H films consisting of polysilane molecules and a-Si clusters have been investigated up to 100 kbar. X-ray diffraction patterns for the film at 1 atm show a prominent first sharp diffraction peak, which shifts to higher angles with decreasing intensity upon pressurizing. The macroscopic volume is compressed dramatically below 50 kbar. At higher pressures, the structural changes become less salient, and by contrast, the band-gap energy decreases remarkably with a pressure coefficient of -8 meV/kbar. These pressure-induced changes are discussed in comparison with characteristics in three-dimensional a-Si films and in chalcogenide glasses. Essential roles of low-dimensional structures and σ-electron states in polysilane molecules are suggested.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	Copyright © 1989 American Physical Society
PISSN	0021-8979
関連情報	URI http://www.aps.org
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1103/PhysRevB.39.3258