Critical cluster size of InAs quantum dots formed by Stranski-Krastanow mode

Shiramine, Ken-ichi; Itoh, Tomohiko; Muto, Shunichi

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2004, 22(2), 642-646

Permalink : https://hdl.handle.net/2115/5857

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アクセス権	open access
URI	https://hdl.handle.net/2115/5857
タイトル	Critical cluster size of InAs quantum dots formed by Stranski-Krastanow mode
著者	Shiramine, Ken-ichi ; Itoh, Tomohiko ; Muto, Shunichi
e-Rad_Researcher 10241358 著者名 Shiramine, Ken-ichi 白峰, 賢一
著者名 Itoh, Tomohiko
e-Rad_Researcher 00114900 著者名 Muto, Shunichi
言語	英語
発行日	2004-03
出版者	American Vacuum Society
収録物名	Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
巻(号)	22(2)
ページ	642-646
抄録	The number of In atoms in a critical cluster, i, in Stranski-Krastanow (S-K) mode of InAs islands was determined to be 1-10. The i was determined using an activation energy EA of 2.0 eV determined from an Arrhenius plot of the saturated density of InAs islands formed on a GaAs (001) surface by S-K mode of molecular beam epitaxy [K. Shiramine et al., J. Cryst. Growth 242, 332 (2002)], and an activation energy of 1.6 eV for migration (surface diffusion) of In adatoms, inferred from other references. The common value ~2.0 eV of EA in S-K mode was ascribed to the small i*.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
PISSN	1071-1023
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1116/1.1651113