open access

https://hdl.handle.net/2115/5870

Ferromagnetic nanoclusters hybridized in Mn-incorporated GaInAs layers during metal–organic vapour phase epitaxial growth on InP layers under low growth temperature conditions

英語

2005-06

Institute of Physics

Nanotechnology

16(6)

957-965

http://www.iop.org/

We demonstrate the successful formation of ferromagnetic nanoclusters in Mn-incorporated GaInAs layers grown by metal–organic vapour phase epitaxy on InP(100) substrates under low growth temperature conditions below 450 °C. We find that MnAs nanoclusters with NiAs-type hexagonal crystallographic structures, which show ferromagnetic characteristics up to a relatively high temperature of about 305 K, are formed near the layer surfaces of Mn-incorporated GaInAs layers grown at 440 °C. After deposition of undoped InP layers on Mn-incorporated GaInAs layers, MnP nanoclusters with orthorhombic cubic crystallographic structures, in which 7% arsenic is incorporated, are formed in InP layers. The samples with MnP nanoclusters show strong ferromagnetic coupling up to about 305 K, although the Curie temperature of MnP bulk compounds is 291 K. Energy dispersive x-ray spectroscopy (EDS) indicates that Mn concentrations in InP and GaInAs layers surrounding MnP nanoclusters are almost negligible. MnAs nanoclusters are also formed in Mn-incorporated GaAs layers grown under low growth temperature conditions of 450 °C on GaAs(100) substrates. From the results of magnetic characterizations with respect to growth temperatures of the samples, we found that all the Mn-incorporated GaAs layers grown at temperatures below 450 °C showed ferromagnetic behaviour.

学術雑誌論文

Accepted Manuscript

Copyright © 2005 IOP Publishing Ltd.

0957-4484