Improvement of InAs quantum-dot optical properties by strain compensation with GaNAs capping layers

Zhang, X. Q; Ganapathy, S.; Suemune, I. et al.

Applied Physics Letters, 2003, 83(22), 4524-4526

Permalink : https://hdl.handle.net/2115/5876

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URI	https://hdl.handle.net/2115/5876
タイトル	Improvement of InAs quantum-dot optical properties by strain compensation with GaNAs capping layers
著者	Zhang, X. Q ; Ganapathy, S. ; Suemune, I. ; Kumano, H. ; Uesugi, K.
著者名 Zhang, X. Q
著者名 Ganapathy, S.
e-Rad_Researcher 00112178 著者名 Suemune, I. 末宗, 幾夫
e-Rad_Researcher 70292042 著者名 Kumano, H.
著者名 Uesugi, K.
言語	英語
発行日	2003-12
出版者	American Institute of Physics.
収録物名	Applied Physics Letters
巻(号)	83(22)
ページ	4524-4526
抄録	Two kinds of self-assembled InAs quantum dots (QDs) grown on GaAs (001) substrates were studied. One is capped with GaAs layers and the other with GaNAs strain-compensating layers. Photoluminescence (PL) measurements on the two kinds of InAs QDs showed distinct dependence on the selection of the capping layers. The homogeneity and luminescence efficiency of the InAs QDs were much improved when the net strain was reduced with GaNAs layers. These results demonstrate the importance of net strain compensation for the improved optical quality of InAs QDs.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	Copyright © 2003 American Institute of Physics
PISSN	0003-6951
関連情報	URI http://www.aip.org/
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1063/1.1629803