Photoluminescence study of InAs quantum dots embedded in GaNAs strain compensating layer grown by metalorganic-molecular-beam epitaxy

Zhang, X. Q.; Ganapathy, Sasikala; Kumano, H.; Uesugi, Kasturi; Suemune, Ikuo

Photoluminescence study of InAs quantum dots embedded in GaNAs strain compensating layer grown by metalorganic-molecular-beam epitaxy

Zhang, X. Q.; Ganapathy, Sasikala; Kumano, H. et al.

JOURNAL OF APPLIED PHYSICS, 2002, 92(11), 6813-6818

Permalink : https://hdl.handle.net/2115/5886

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アクセス権	open access
URI	https://hdl.handle.net/2115/5886
タイトル	Photoluminescence study of InAs quantum dots embedded in GaNAs strain compensating layer grown by metalorganic-molecular-beam epitaxy
著者	Zhang, X. Q. ; Ganapathy, Sasikala ; Kumano, H. ; Uesugi, Kasturi ; Suemune, Ikuo
著者名 Zhang, X. Q.
著者名 Ganapathy, Sasikala
e-Rad_Researcher 70292042 著者名 Kumano, H.
著者名 Uesugi, Kasturi
e-Rad_Researcher 00112178 著者名 Suemune, Ikuo 末宗, 幾夫
言語	英語
発行日	2002-12
出版者	American Institute of Physics
収録物名	JOURNAL OF APPLIED PHYSICS
巻(号)	92(11)
ページ	6813-6818
抄録	Self-assembled InAs quantum dots (QDs) embedded in GaN0.007As0.993 strain compensating layers have been grown by metalorganic-molecular-beam epitaxy on a GaAs (001) substrate with a high density of 1×1011 cm–2. The photoluminescence properties have been studied for two periods of InAs quantum dots layers embedded in GaN0.007As0.993 strain compensating layers. Four well-resolved excited-state peaks in the photoluminescence spectra have been observed from these highly packed InAs QDs embedded in the GaN0.007As0.993 strain compensating layers. This indicates that the InAs QDs are uniformly formed and that the excited states in QDs due to the quantum confinement effect are well defined. This is explained by tensile strain in GaNAs layers instead of the usual GaAs layers to relieve the compressive strain formed in InAs QDs to keep the total strain of the system at a minimum.
資源タイプ	学術雑誌論文
出版タイプ	Version of Record
権利情報	Copyright © 2002 American Institute of Physics
PISSN	0021-8979
関連情報	URI http://www.aip.org/
関連情報 (isIdenticalTo)	出版社版DOI https://doi.org/10.1063/1.1516873