open access

https://hdl.handle.net/2115/60344

Quantum-Confined Stark Effect Analysis of GeSn/SiGeSn Quantum Wells for Mid-Infrared Si-Based Electroabsorption Devices Based on Many-Body Theory

英語

and many-body theory

2015-11

IEEE

IEEE journal of quantum electronics

51(11)

8400207

Quantum-confined Stark effect (QCSE) of group IV Ge(Sn)/SiGe(Sn) quantum wells (QWs) on Si substrate is analyzed by microscopic many-body theory for mid-infrared (mid-IR) Si-based electroabsorption devices. To show the validity of the theory, QCSE of Ge/SiGe QW is investigated and very good agreement between theory and reported measured results is obtained. Next, the QCSE of GeSn/SiGeSn QWs is analyzed and the QW design for electroabsorption modulators to obtain large extinction ratio in mid-IR region is presented. It is shown that compressive and tensile strained well and barrier layers is preferable to obtain large extinction ratio due to its large conduction band offset.

学術雑誌論文

Submitted Manuscript Under Review

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